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It seems the examples are always about single site defect, e.g. a vacancy or an interstitial. If I prepare VASP calculations about defect complex such as two neighboring vacancies, can doped recognizes the results, processes further, and plots transition level diagrams?
Thank you!
Before taking developer time, I have searched the following curated resources for answers:
If your question is about general defect calculation methodology (rather than specific to doped), please refer to the following papers, and other relevant literature:
Hi @jumpingfermions, good question.
It is possible to simulate complex defects using doped, but they are not automatically handled at present (though this is on the development plan!) and so it requires some code customisation on the part of the user.
Firstly, for generating complex defects, the recommended approach is to generate one of the constituent point defects in the complex using the usual DefectsGenerator approach, then feeding in the defective supercell to DefectsGenerator again, for it to generate 2-defect supercells. You can then ensure that this only includes symmetry-inequivalent combinations by taking only those with unique defect-defect distances. This is discussed in #91, and this approach was used in https://arxiv.org/abs/2412.19330 (for which the notebooks used will be shared soon, but some example code is given in #91), as well as e.g. https://pubs.rsc.org/en/content/articlelanding/2021/sc/d1sc03775g & https://pubs.rsc.org/en/content/articlehtml/2023/ta/d3ta00532a.
For parsing, a similar approach can be used, where you use a neutral charge state of one of the constituent point defects as the "bulk" supercell reference, to then parse the complex defect calculation outputs in the normal way (which will get the appropriate charge correction etc), before then accounting for the formation energy of the neutral 'bulk' reference in this case. Alternatively, you can directly use the different doped sub-functions (e.g. for charge corrections; see https://doped.readthedocs.io/en/latest/doped.corrections.html; site determination etc) and calculated chemical potentials to determine the formation energies etc. This approach was used in: https://pubs.rsc.org/en/content/articlelanding/2021/sc/d1sc03775g
I will try to update this method when further updates to doped are added for automatically handling complex defects!
It seems the examples are always about single site defect, e.g. a vacancy or an interstitial. If I prepare VASP calculations about defect complex such as two neighboring vacancies, can doped recognizes the results, processes further, and plots transition level diagrams?
Thank you!
Before taking developer time, I have searched the following curated resources for answers:
doped
documentation site – tip: use the search bar on the left.doped
tutorialsdoped
Python API docsdoped
issues where the same question may have been asked – tip: use the search bar.doped
docs pages; such as Tips, Troubleshooting and InstallationIf your question is about general defect calculation methodology (rather than specific to
doped
), please refer to the following papers, and other relevant literature:The text was updated successfully, but these errors were encountered: